The design for a 1.8V OVT-Driver (Over Voltage Tolerant-Driver) circuit utilizing 1.2V transistors has been presented, incorporating an ESD (Electrostatic Discharge) local clamp protection in 4nm FinFET technology. In advanced process nodes, where only low-voltage transistors are provided by foundries, innovative OVT design approaches are required to enable higher voltage operation. Additionally, the selection of appropriate ESD protection is deemed crucial to ensure reliability and to prevent damage caused by ESD events. Design considerations, ESD protection mechanisms, and measurement data are detailed, demonstrating the effectiveness of the approach in protecting the delicate FinFET structures.